D25N10
Power Switching
2021
Discrete Device
Metal-Oxide Semiconductor
D25n10
to-252
N-Type Semiconductor
100V
25A
Wxdh
WXDH
Tape & Reel
Wuxi, China
8541290000
Product Description
| PARAMETER | SYMBOL | VALUE | UNIT | ||
| 25N10/I25N10/E25N10/B25N10/D25N10 | F25N10 | ||||
| Maximum Drian-Source DC Voltage | VDS | 100 | V | ||
| Maximum Gate-Drain Voltage | VGS | ±20 | V | ||
| Drain Current(continuous) | ID(T=25ºC) | 30 | A | ||
| (T=100ºC) | 21 | A | |||
| Drain Current(Pulsed) | IDM | 90 | A | ||
| Single Pulse Avalanche Energy | EAS | 36 | mJ | ||
| Total Dissipation | Ta=25ºC | Ptot | 2 | 2 | W |
| TC=25ºC | Ptot | 88 | 35 | W | |
| Junction Temperature | Tj | -55~175 | ºC | ||
| storage Temperature | Tstg | -55~175 | ºC | ||
| Features |
| Fast Switching |
| Low ON Resistance(Rdson≤36mΩ) |
| Low Gate Charge(Typ: 61 nC) |
| Low Reverse Transfer Capacitances(Typ: 84pF) |
| 100% Single Pulse Avalanche Energy Test |
| 100% ΔVDS Test |
| Applications |
| Power switching applications |
| LED Boost |
| UPS power supply |
| Load switch |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| 25N10 | TO-220C | 25N10 | Pb-free | Tube | 1000/box |
| F25N10 | TO-220F | F25N10 | Pb-free | Tube | 1000/box |
| B25N10 | TO-251 | B25N10 | Pb-free | Tube | 3000/box |
| D25N10 | TO-252 | D25N10 | Pb-free | Tape & Reel | 2500/box |
| I25N10 | TO-262 | I25N10 | Pb-free | Tube | 1000/box |
| E25N10 | TO-263 | E25N10 | Pb-free | Tape & Reel | 800/box |
