Model NO.:

DHD10N65

Voltage:

650V

Current:

10A

Manufacturing Technology:

Discrete Device

Type:

N-type Semiconductor

Material:

Metal-Oxide Semiconductor

Package:

to-252

Application:

Power Switching Applications

Model:

DHD10n65

Batch Number:

2021

Brand:

Wxdh

Trademark:

WXDH

Transport Package:

Tape & Reel

Origin:

Wuxi, China

HS Code:

8541290000

Product Description

PARAMETER		SYMBOL	VALUE	UNIT
			DHB10N65/DHD10N65
Drian-to-Source Voltage		V_DSS	650	V
Gate-to-Drian Voltage		V_GSS	±30	V
Drain Current(continuous)		I_D(T=25ºC)	10	A
		(T=100ºC)	6.3	A
Drain Current(Pulsed)		I_DM	40	A
Single Pulse Avalanche Energy		E_AS	500	mJ
Total Dissipation	Ta=25ºC	Ptot	1.15	W
	TC=25ºC	Ptot	120	W
Junction Temperature		T_j	-55~150	ºC
storage Temperature		T_stg	-55~150	ºC

Features

Fast Switching

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

used in various power switching circuit for system
miniaturization and higher efficiency.

Power switch circuit of electron ballast and adaptor.

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHB10N65	TO-251	DHB10N65	Pb-free	Tube	3000/box
DHD10N65	TO-252	DHD10N65	Pb-free	Tape & Reel	2500/box

10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252