G50T65LBBW
Welding, UPS
2022
Discrete Device
Silicon
G50t65lbbw
to-247
N-Type Semiconductor
650V
50A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 650 | V | ||
| Gate- Emitter Voltage | VGES | ±20 | V | ||
| Collector Current | IC(T=25ºC) | 100 | A | ||
| Collector Current | (Tc=100ºC) | 50 | A | ||
| Pulsed Collector Current | ICM | 150 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 20 | A | ||
| Diode Maximum Forward Current | IFM | 10 | A | ||
| Total Dissipation | TC=25ºC | PD | 417 | W | |
| TC=100ºC | PD | 208 | W | ||
| Junction Temperature | Tj | -55~175 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
50A 650V Trenchstop Insulated Gate Bipolar Transistor
Description
Using DongHai's proprietary Trench design and advance
FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness
easy parallel operation
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat), typ = 1.8V @ IC =50A and Tj = 25°C |
| Extremely enhanced avalanche capability |
| Applications |
| welding machine |
| Three-level Inverter |
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| G50T65LBBW | TO-247 | G50T65LBBW | Pb-free | Tube | 300/box |
