Name: Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn
Brand: Madeinchina.com
SKU: MIC-785075
Availability: InStock

Model NO.:

G40T60D

Manufacturing Technology:

Discrete Device

Type:

N-type Semiconductor

Material:

Silicon

Package:

to-3pn

Application:

Aircondition, Weldin, UPS

Model:

G40t60d

Batch Number:

2021

Brand:

Wxdh

Trademark:

WXDH

Transport Package:

Tube

Origin:

Wuxi, China

HS Code:

8541290000

Product Description

PARAMETER		SYMBOL	RATING	UNIT

Collector-Emitter Voltage		V_CES	600	V
Gate- Emitter Voltage		V_GES	±20	V
Collector Current		I_C(T=25ºC)	80	A
Collector Current		(Tc=100ºC)	40	A
Pulsed Collector Current		I_CM	120	A
Diode Continuous Forward Current		I_F@TC = 100 °C	20	A
Diode Maximum Forward Current		I_FM	100	A
Total Dissipation	T_C=25ºC	P_D	280	W
	T_C=100ºC	P_D	110	W
Junction Temperature		T_j	150	ºC
storage Temperature		T_stg	-55~150	ºC

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: V_CE(sat), typ = 1.8V
@ I_C=40A and V_GE=25V

Applications

welding

Aircondition

UPS

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
G40T60D	TO-3PN	G40T60D	Pb-free	Tube	300/box

Insulated Gate Bipolar Transistor IGBT G40t60d to-3pn