4-inch P Grade
Diode, Power Electronic Components
CCC, CE, RoHS
Ф 100 ± 0.3 mm
650 ± 50μm
< 0.5 Ω*Cm
≤ 30μm
≤-30μm-≤30μm
GaN-FS-C-U-C100
China
2804611900
Product Description
GaN single crystal substrates for RF electronics
GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance.
HEMT devices based on GaN single crystal substrates provide solutions for simultaneous high frequency, wide spectrum, high efficiency, high power density and high reliability.
Semi-insulated GaN, Fe doped, C doped
GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance.
HEMT devices based on GaN single crystal substrates provide solutions for simultaneous high frequency, wide spectrum, high efficiency, high power density and high reliability.
Semi-insulated GaN, Fe doped, C doped
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: A: Yes, we can customize the specifications according to your needs.
