DCC080M120A
Power Supplies
2023
Discrete Device
Sic
Dcc080m120A
to-247-3L
Other
N-Type Semiconductor
1200V
68A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
68A 1200V N-channel SIC Power MOSFET
1 Description
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
| Features |
| Higher System Efficiency |
| Reduced Cooling Requirements |
| Increased Power Density |
| Increased System Switching Frequency |
| Applications |
| Power Supplies |
| High Voltage DC/DC Converters |
| Motor Drives |
| Switch Mode Power Supplies |
| Pulsed Power applications |
| PARAMETER | SYMBOL | Test Conditions | VALUE | UNIT | |||
| Drian-to-Source Voltage | VDSmax | VGS=0V, ID=100μA | 1200 | V | |||
| Gate-to-Source Voltage max | VGSmax | Absolute maximum values | -10/+25 | V | |||
| Gate-to-Source Voltage max | VGSS | Recommended operational values | -5/+20 | V | |||
| Continuous Drain Current | ID TC=25ºC | VGS=20V,TC=25ºC | 36 | A | |||
| TC=100ºC | VGS=20V,TC=100ºC | 24 | A | ||||
| Pulsed Drain Current | IDM | Pulse width tp limited by TJmax | 80 | A | |||
| Power Dissipation | Ptot | Tc=25ºC, TJ=150ºC | 192 | W | |||
| Ptot | Tc=25ºC, TJ=150ºC | W | |||||
| Junction Temperature Range | Tj | -55~150 | ºC | ||||
| Storage Temperature Range | Tstg | -55~150 | ºC | ||||
4.2 Thermal Characteristics
| Parameter | Symbol | Rating | Unitº |
| Thermal Resistance,Junction to Case-sink | RthJC | 0.6 | ºC/W |
| Thermal Resistance,Junction to Ambient | RthJA | 40 | ºC/W |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DCC080M120A | TO-247-3L | DCC080M120A | Pb-free | Tube | 300/box |
| DCCF080M120A | TO-247-4L | DCCF080M120A | Pb-free | Tube | 300/box |
