Model NO.:

MBR20100CT

Application:

Diode, Switching Power Supply

Batch Number:

2021

Certification:

RoHS

Manufacturing Technology:

Discrete Device

Material:

Silicon

Model:

Mbr20100CT

Package:

to-220c

Type:

P-Type Semiconductor

Voltage:

100V

Current:

20A

Brand:

Wxdh

Trademark:

WXDH

Transport Package:

Tube

Origin:

Wuxi, China

HS Code:

8541100000

Product Description

Features

High junction temperature capabiliy

Low leakage current

Low thermal resistance

High frequency operation

Avalanche specification

Applications

Switching Power Supply

Power Switching Circuits

General Purpose

PARAMETER		SYMBOL	VALUE	UNIT

Peak Repetitive Reverse Voltage		V_RRM	100	V
RMS Reverse Voltage		V_R(RMS)	80	V
DC Blocking Voltage		V_R	100	V
Average Rectified Forward Current(single)	TO-220,TC=120ºC TO-220F,TC=90ºC	I_F(AV)	10	A
Average Rectified Forward Current(double)			20	A
Repetitive Peak Surge Current(single)		I_FRM	15	A
Nonrepetitive Peak Surge Current(single)	t=8.3ms	I_FSM	150	A
Avalanche Energy(single)	L=1mH	E_AS	24	mJ
Junction Temperature		T_j	-55~175	ºC
storage Temperature		T_stg	-55~175	ºC

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
MBR20100CT	TO-220C	MBR20100CT	Pb-free	Tube	1000/box

20A 100V Schottkybarrierdiode Mbr20100CT to-220c