12inch
Semi Standard
Compound Semiconductor
P-Type Semiconductor
CZ
100
Boron
1-100Ω
Polished
Polished
300±0.2mm
775±25μm
FSM
Semi Standard
TBD
China
3818001920
Product Description
Why Choose FSM?
- Expertise: With a team of experienced professionals and state-of-the-art manufacturing facilities, we deliver consistently high-quality wafers.
- Wide Range of Products: From Czochralski (CZ) and Float Zone (FZ) silicon wafers to SOI and glass wafers, we offer a comprehensive selection to meet your specific needs.
- Customization: We specialize in manufacturing custom wafers to your exact specifications, ensuring your project's success.
- Fast Turnaround: Our streamlined processes and in-stock inventory enable us to provide quick delivery, keeping your projects on schedule.
- Global Reach: We ship worldwide from our China and Japan warehouse, serving customers in over 50 countries.
Dummy wafers (also called as test wafers) are wafers mainly used for experiment and test and being different from general wafers for product.
Accordingly, reclaimed wafers are mostly applied as dummy wafers (test wafers).
Dummy wafers are often used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form.
As dummy wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions.
Accordingly, reclaimed wafers are mostly applied as dummy wafers (test wafers).
Dummy wafers are often used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form.
As dummy wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions.
Wafers processed with film deposition is called film wafer.
Examples of film to be used (growth of film) include isolation film as isolation material between layers, metal film as conductive material, process material such as resist and protective film.
Examples of film to be used (growth of film) include isolation film as isolation material between layers, metal film as conductive material, process material such as resist and protective film.
Use reference value
| Item | Specification | ||
| Diameter | 150mm | 200mm | 300mm |
| Type | P/N | P/N | P/N |
| Notch | SEMI/JEIDA | Notch/OF | Notch |
| Thickness(μm) | 675±25/625±25 | 725±25 | 725±25 |
| Surface | Polished | Polished | Polished |
| Inside | Etched | Etched | Etched |
| Package | CoinRoll | CoinRoll | CoinRoll |
150MM/200MM Test wafer
| 150MM | ||
| SPEC | 0.2um≤30ea | |
| Diameter(mm) | 150±0.2mm | |
| Type | P | |
| Olyfra length | 57.5mm±2.5mm | 47.5mm±2.5mm |
| Resistance value ( Ω·cm ) | 1-100 | |
| Thickness(μm) | SEMI | JEIDA |
| 675um±25um | 675um±25um | |
| TTV(μm) | ≤30um | |
| BOW(μm) | ≤40um | |
| WARP(μm) | ≤40um | |
| Surface impurity | ≤5.0E 10 atom/cm² | |
| 200MM | ||
| SPEC | 0.2um≤30ea | - |
| Diameter(mm) | 200±0.2mm | |
| Type | P | |
| Crystal orientation | <110>±1 | |
| Notch direction | ||
| Resistance value ( Ω·cm ) | 1-100 | |
| Thickness(μm) | 725um±25um | |
| TTV(μm) | ≤25um | ≤2um |
| BOW(μm) | ≤40um | |
| WARP(μm) | ||
| LM | NO | |
| Surface impurity | ≤5.0E 10 atom/cm² | |
300MM Test wafer
| 300MM | ||||
| SPEC | 0.045um≤50ea | 0.065um≤50ea | 0.09um<50ea | 0.12um<50ea |
| Manufacturing method | CZ | |||
| Diameter(mm) | 300±0.2mm | |||
| Type/Dopant | P/Boron | |||
| Crystal orientation | <100>±1 | |||
| Notch direction | ||||
| Resistance value (Ω·cm) | 1-100 | |||
| Thickness(μm) | 775±25 | |||
| TTV(μm) | ≤10 | |||
| BOW(μm) | ≤40 | |||
| WARP(μm) | ||||
| LM | T7+ OCR | |||
| Surface impurity | <1 E10 Atoms/cm² | |||
200MM/300MM Oxide wafer
| 200MM | 300MM | |
| Oxide thickness | 500±25nm | |
| Variation in oxide thickness (for one wafer) | <3% | |
| Variation in oxide thickness (for multiple wafers) | <3% | |
| SPEC | 0.2μm≤30ea | |
| Diameter(mm) | 200±0.2mm | 300±0.2mm |
| Type | P | |
| Crystal orientation | <100>±1 | |
| Notch direction | <100>±1 | |
| Resistance value (Ω ·cm) | 1-100 | |
| Thickness(μm) | 725±25 | |
| TTV(μm) | ≤25 | ≤10 |
| BOW(μm) | ≤40 | |
| WARP(μm) | ≤40 | |
| Surface impurity | ≤5.0 E10 Atom/cm² | <1 E10 Atoms/cm² |
* Please contact us for other film types, film thickness, and film composition.
Fine Silicon Manufacturing(Shanghai) Ltd. was established in August, 2008. We built a wafer reclaim factory in Shanghai Pudong New Area, providing mainly 6-12inch wafers lapping and polishing. 50K PCS/month capacity. Meanwhile, we are the agent of particle controlled test wafers reclaim, wafer film coating, wafer thinning. If you have interest, PleaseCONTACT USfor more information.
Q: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q: How to pay?
A: T/T, PayPal and etc..
Q: What's the deliver time?
A: For inventory: the delivery time is 5 workdays.
For customized products: the delivery time is 7 to 25 workdays. According to the quantity.
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.
Every customer's specification is unique and FSM can supply wafers that meet your exact specifications.
