Model NO.:

DHE10H037R

Application:

Power Switching Applications

Batch Number:

2021

Manufacturing Technology:

Discrete Device

Material:

Metal-Oxide Semiconductor

Model:

Dhe10h037r

Package:

to-263

Type:

P-Type Semiconductor

Voltage:

100V

Current:

120A

Brand:

Wxdh

Trademark:

WXDH

Transport Package:

Tape & Reel

Origin:

Wuxi, China

HS Code:

8541290000

Product Description

PARAMETER		SYMBOL	VALUE		UNIT
			DHF10H 037R	DH10H037R/ DHE10H037R
Drian-to-Source Voltage		V_DSS	100		V
Gate-to-Source Voltage		V_GSS	±20		V
Drain Current(continuous)		I_D(T=25ºC)	120		A
		(T=100ºC)	109		A
Drain Current(Pulsed)		I_DM	480		A
Single Pulse Avalanche Energy		E_AS	1200		mJ
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	90	227	W
Junction Temperature		T_j	-55~150		ºC
storage Temperature		T_stg	-55~150		ºC

Features

Fast Switching

Low ON Resistance

Low Gate Charge

High avalanche Current

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Switching power supply

Inverter power management system

Power tool control

Automotive electronics applications

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DHE10H037R	TO-263	DHE10H037R	Pb-fee	REEL	800/box

120A 100V N-Channel Enhancement Mode Power Mosfet Dhe10h037r to-263