Share
Video
Categories
Channel
To247-4L Ost50n65h4ewf Vces-650V Maximum Junction Temperature175 Pulse-200A Vce (sat) -1.4V Qg-104nc IGBT
2025-04-13
introduction
433
0
Model NO.:
cIGBT-Sic Diode TO247-4L OST50N65H4EWF
Certification:
RoHS, ISO
Shape:
GT
Shielding Type:
Remote Cut-Off Shielding Tube
Cooling Method:
Air Cooled Tube
Function:
Switch Transistor
Working Frequency:
High Frequency
Structure:
Planar
Encapsulation Structure:
Chip Transistor
Power Level:
High Power
Material:
Silicon
Trademark:
Orientalsemi
Origin:
China
HS Code:
8541290000
Like
0
Oppose
0
Awards
0
Comment
0
Share
0
To220 Osg95r1K2PF Vds-1000V ID-15A RDS (ON) -1.2ohm N-Channel Power Mosfet
0Comment
411 Play
To220 Sfs04r02PF Vds-40V ID-390A RDS (ON) -2.0milliohm Qg-96.8nc N-Channel Power Mosfet
0Comment
442 Play
Sic Diode To247 Ost80n65hewf Vces-650V Maximum Junction Temperature175, IC, Pulse-320A Vce (sat) -1.45V Qg-168nc Power IGBT
0Comment
307 Play
Sic Diode To247-4L Ost60n65h4ewf Vces-650V Temperature175, IC-Pulse-240A Vce (sat) -1.45V Qg-105nc N-Channel Power IGBT
0Comment
200 Play