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Sic Diode To247 Ost80n65hewf Vces-650V Maximum Junction Temperature175, IC, Pulse-320A Vce (sat) -1.45V Qg-168nc Power IGBT

2025-04-13 introduction 3070
IGBT-Sic Diode TO247 OST80N65HEWF
RoHS, ISO
ST
Sharp Cutoff Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Diffusion
Chip Transistor
High Power
Silicon
Orientalsemi
Carton
China
8541290000
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