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Semiconductor Wafer Polished 150mm Silicon Oxide Wafer

2025-04-13 introduction 4270

Model NO.:

6inch 1000A

Application:

Semi Standard

Material:

Compound Semiconductor

Type:

P-Type Semiconductor

Growth Method:

CZ

Crystal Orientation:

100

Dopant:

Boron

Resistivity:

1-100Ω

Front Side:

Polished

Backside:

Etched

Diameter:

150±0.3mm

Thickness:

675±25mm

Oxide Thickness:

1000A

Ttv:

≤10μm

Warp:

≤30μm

Bow:

≤30μm

Trademark:

FSM

Transport Package:

Semi Standard

Specification:

TBD

Origin:

China

HS Code:

3818001920

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