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N/P Type Prime Quality 8inch Silicon Oxide Wafer

2025-04-13 introduction 3010

Model NO.:

8inch 5000A

Application:

Semi Standard

Material:

Compound Semiconductor

Type:

P-Type Semiconductor

Growth Method:

CZ

Crystal Orientation:

100

Dopant:

Boron

Resistivity:

1-100Ω

Front Side:

Polished

Backside:

Etched

Diameter:

200±0.2mm

Thickness:

725±25mm

Oxide Thickness:

5000A

Ttv:

≤25μm

Warp:

≤40μm

Bow:

≤40μm

Trademark:

FSM

Transport Package:

Semi Standard

Specification:

TBD

Origin:

China

HS Code:

3818001920

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