Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors

2025-04-13 introduction 3810

Model NO.:

INC-DBC20310

Application:

Semiconductors, Aerospace, Electronics, Medical, Vacuum Brazing

Compressive Strength:

2300MPa

Coating Thickness:

8-30μm

Coating Layer:

Mo/Mn

Plated Layer:

Nickel/Copper/Gold etc.

Thermal Conductivity:

25W/(M.K)

Plating Thickness:

2-9μm

Max. Use Temperature:

1600ºC

Density:

3.7g/cm3

Material Composition:

Alumina, Al2O3

Speciality:

High Insulation

Type:

Insulating Ceramics

Trademark:

INNOVACERA

Specification:

Customized

Origin:

Fujian, China

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