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8inch Ultra-P Grade 4h N Type Semiconductor Silicon Carbide Wafer Sic Substrate

2025-04-13 introduction 2740

Model NO.:

4H N-type Ultra-P Grade

Application:

Diode, Power Electronic Components

Certification:

RoHS

Manufacturing Technology:

Pvt

Material:

6n Sic Powder

Model:

4h N-Type

Package:

Epi-Ready with Vacuum Packaging

Type:

N-Type Semiconductor

Diameter:

8 Inch

Thickness:

500±25μm

Poly Type:

4h

Resistivity:

0.015~0.025ohm·cm

Ttv:

≤7μm

Warp:

≤30μm

(Afm) Front (Si-Face) Roughness:

Ra≤0.2nm

Trademark:

HC

Transport Package:

Multi-Waferorsingle Wafer Cassette Packaging

Specification:

8Inch 4H N-type

Origin:

China

HS Code:

2804611900

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