2-12 Inch Epitaxially Grown Sapphire Substrate Wafers - Intrinsic Semiconductor - Semiconductor - Electrical & Electronics - Video

Model NO.:

2 InchSubstrate, 4 InchSubstrate, 6 Inch substrate

Application:

Detector, Diode, LCD Display Controller, Power Electronic Components, Television, Temperature Measurement, Single Crystal Substrate Material

Batch Number:

2024

Manufacturing Technology:

Optoelectronic Semiconductor

Material:

Sapphire

Model:

LED

Type:

Intrinsic Semiconductor

Polishing:

Single or Double Sided

Moh'S Hardness:

9

Growth Method:

Czochralski Method

Density:

3.98(g/cm3)

Trademark:

HC

Transport Package:

Class 100 Clean Bags, Class 1000 Clean Rooms

Specification:

4-12Inch

Origin:

China