DGC80F65M
Welding, UPS
2023
Discrete Device
Silicon
Dgc80f65m
to-247
N-Type Semiconductor
650V
80A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 650 | V | ||
| Gate- Emitter Voltage | VGES | ±30 | V | ||
| Collector Current | IC(T=25ºC) | 160 | A | ||
| Collector Current | (Tc=100ºC) | 80 | A | ||
| Pulsed Collector Current | ICM | 240 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 80 | A | ||
| Diode Pulsed Current | IFM | 440 | A | ||
| Total Dissipation | TC=25ºC | PD | 220 | W | |
| TC=100ºC | PD | 155 | W | ||
| Junction Temperature | Tj | -45~175 | ºC | ||
| storage Temperature | Tstg | -45~150 | ºC | ||
| Features |
FS Trench Technology, Positive temperature coefficient |
Low saturation voltage: VCE(sat), typ = 1.8V @ IC =80A and Tj = 25°C |
Extremely enhanced avalanche capability |
| Applications |
| Welding |
| Three-level inverter |
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DGC80F65M | TO-247 | DGC80F65M | Pb-free | Tube | 1000/box |
