Share Video Categories Channel

Advanced 6h P-Type 3c N-Type Silicon Carbide Wafer for Semiconductor Applications

2025-04-13 introduction 3020

Model NO.:

2~4inch 3C N-type

Application:

Diode, Power Electronic Components

Batch Number:

2023+

Certification:

CCC, CE, RoHS

Manufacturing Technology:

Pvt

Material:

3c-Sic Powder

Diameter:

6inch

Hickness:

350±25μm

Poly Type:

4h/6h/3c

Resistivity:

0.06~0.11 ≤0.1 Ωcm

Trademark:

HC

Specification:

4Inch

Origin:

China

HS Code:

2804611900

Like 0

Oppose 0

Awards 0

Comment 0

2 Inch Sic Silicon Carbide Wafer Dummy Grade
0Comment349 Play

China Quality Research Grade 6-Inch Silicon Carbide Wafer
0Comment268 Play

4"6"8" P R D Grade Silicon Carbide Ingot China Sic Crystal Rod
0Comment232 Play

2-Inch Self-Supporting GaN Wafer (silicon doped)
0Comment432 Play