4inch 100mm Thickness 525um Polished Silicon Wafer for Semiconductor

2025-04-13 introduction 2100

Growth Method:

CZ and Fz

Orientation:

111 or 100

Resistivity:

0.0005 to 150

Surface:

Double Side Polished or Single Side Polished

Dopant:

N Type and P Type

Particles:

<30 at 0.3um

Bow:

< 30 Um

Ttv:

<15 Um

Manufacturing Technology:

Optoelectronic Semiconductor

Material:

Compound Semiconductor

Type:

Intrinsic Semiconductor

Package:

SMD

Signal Processing:

Analog Digital Composite and Function

Application:

LED

Transport Package:

Box

Origin:

Jiaozuo Henan

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