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12 Inch Polished Round Ceramic Silicon Carbide Sic Semiconductor Dummy Wafer

2025-04-13 introduction 3460

Model NO.:

12inch

Growth Method:

CZ

Crystal Orientation:

100

Dopant:

Boron

Resistivity:

1-100Ω

Frront Side:

Polished

Edge:

Polished

Trademark:

FSM

Transport Package:

Semi Standard

Specification:

TBD

Origin:

China

HS Code:

3818001920

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