TO252 SFG10R20DF
RoHS, ISO
Metal Porcelain Tube
Sharp Cutoff Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Planar
Chip Transistor
High Power
Silicon
Pd Charge
Motor Driver
DC-DC Convertor
Switched Mode Powder Supply
Orientalsemi
Carton
35x30x37cm
China
8541290000
Product Description
General Description
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage.
Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent reliability and uniformity
. Fast switching and soft recovery
Applications
. PD charger
. Motor driver
. Switching voltage regulator
. DC-DC convertor
. Switched mode power supply
Key Performance Parameters
Marking Information
Package & Pin information
Oriental Semiconductor © Copyright Reserved V2.0
SFGMOS® MOSFET is based on Oriental Semiconductor's unique device design to achieve low RDS(ON) , low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage.
Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent reliability and uniformity
. Fast switching and soft recovery
Applications
. PD charger
. Motor driver
. Switching voltage regulator
. DC-DC convertor
. Switched mode power supply
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 100 | V |
| ID, pulse | 120 | A |
| RDS(ON) max @ VGS=10V | 20 | mΩ |
| Qg | 19.8 | nC |
Marking Information
| Product Name | Package | Marking |
| SFG10R20DF | TO252 | SFG10R20D |
Package & Pin information
Oriental Semiconductor © Copyright Reserved V2.0
Page.1
SFG10R20DF
Enhancement Mode N-Channel Power MOSFET
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
Enhancement Mode N-Channel Power MOSFET
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Drain source voltage | VDS | 100 | V |
| Gate source voltage | VGS | ±20 | V |
| Continuous drain current1) , TC=25 °C | ID | 40 | A |
| Pulsed drain current2) , TC=25 °C | ID, pulse | 120 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 40 | A |
| Diode pulsed current2) , TC=25 °C | IS, Pulse | 120 | A |
| Power dissipation3) , TC=25 °C | PD | 72 | W |
| Single pulsed avalanche energy5) | EAS | 30 | mJ |
| Operation and storage temperature | Tstg ,Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 1.74 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0 V, ID=250 μA | ||
| Gate threshold voltage | VGS(th) | 1.0 | 2.5 | V | VDS=VGS , ID=250 μA | |
| Drain-source on-state resistance | RDS(ON) | 17 | 20 | mΩ | VGS=10 V, ID=8 A | |
| Drain-source on-state resistance | RDS(ON) | 26 | mΩ | VGS=4.5 V, ID=6 A | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V | ||
| - 100 | VGS=-20 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS=100 V, VGS=0 V |
Oriental Semiconductor © Copyright Reserved V2.0
Page.2
Page.2
Dynamic Characteristics
SFG10R20DF
Enhancement Mode N-Channel Power MOSFET
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 1191 | pF | VGS=0 V, VDS=50 V, ƒ=1 MHz | ||
| Output capacitance | Coss | 195 | pF | |||
| Reverse transfer capacitance | Crss | 4.1 | pF | |||
| Turn-on delay time | td(on) | 17.8 | ns | VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A | ||
| Rise time | tr | 3.9 | ns | |||
| Turn-off delay time | td(off) | 33.5 | ns | |||
| Fall time | tf | 3.2 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 19.8 | nC | VGS=10 V, VDS=50 V, ID=8 A | ||
| Gate-source charge | Qgs | 2.4 | nC | |||
| Gate-drain charge | Qgd | 5.3 | nC | |||
| Gate plateau voltage | Vplateau | 3.2 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=8 A, VGS=0 V | ||
| Reverse recovery time | trr | 50.2 | ns | VR=50 V, IS=8 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 95.1 | nC | |||
| Peak reverse recovery current | Irrm | 2.5 | A |
Note
1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C.
