OST40N120HMF TO-247N
Solar Cell
2024
Discrete Device
Compound Semiconductor
Orientalsemi
DIP(Dual In-line Package)
Analog Digital Composite and Function
N-Type Semiconductor
Uninterruptible Power Supplies
Advanced Tgbttm Technology
Orientalsemi
Orientalsemi
Carton
35.3x30x37.5/60x23x13
China
8541290000
Product Description
General Description
OST40N120HMF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.Features
- Advanced TGBTTM technology
- Excellent conduction and switching loss
- Excellent stability and uniformity
- Fast and soft antiparallel diode
Applications
- Induction converters
- Uninterruptible power supplies
Key Performance Parameters
| Parameter | Value | Unit |
| VCES, min @ 25°C | 1200 | V |
| Maximum junction temperature | 175 | °C |
| IC, pulse | 160 | A |
| VCE(sat), typ @ VGE=15V | 1.45 | V |
| Qg | 214 | nC |
Marking Information
| Product Name | Package | Marking |
| OST40N120HMF | TO247 | OST40N120HM |
Absolute Maximum Ratings at Tvj=25°C unless otherwise noted
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Collector emitter voltage | VCES | 1200 | V |
| Gate emitter voltage | VGES | ±20 | V |
| Transient gate emitter voltage, TP≤0.5µs, D<0.001 | ±25 | V | |
| Continuous collector current1), TC=25ºC | IC | 56 | A |
| Continuous collector current1), TC=100ºC | 40 | A | |
| Pulsed collector current2), TC=25ºC | IC, pulse | 160 | A |
| Diode forward current1), TC=25ºC | IF | 56 | A |
| Diode forward current1), TC=100ºC | 40 | A | |
| Diode pulsed current2), TC=25ºC | IF, pulse | 160 | A |
| Power dissipation3), TC=25ºC | PD | 357 | W |
| Power dissipation3), TC=100ºC | 179 | W | |
| Operation and storage temperature | Tstg, Tvj | -55 to 175 | °C |
| Short circuit withstand time VGE=15 V, VCC≤600 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj=150 °C | tSC | 10 | μs |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| IGBT thermal resistance, junction-case | RθJC | 0.42 | °C/W |
| Diode thermal resistance, junction-case | RθJC | 0.75 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 40 | °C/W |
Electrical Characteristics at Tvj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Collector-emitter breakdown voltage | V(BR)CES | 1200 | V | VGE=0 V, IC=0.5 mA | ||
Collector-emitter saturation voltage | VCE(sat) | 1.45 | 1.8 | V | VGE=15 V, IC=40 A Tvj=25°C | |
| 1.65 | V | VGE=15 V, IC=40 A, Tvj =125°C | ||||
| 1.8 | VGE=15 V, IC=40 A, Tvj =175°C | |||||
| Gate-emitter threshold voltage | VGE(th) | 4.8 | 5.8 | 6.8 | V | VCE=VGE, ID=0.5 mA |
Diode forward voltage | VF | 1.9 | 2.1 | V | VGE=0 V, IF=40 A Tvj =25°C | |
| 1.6 | VGE=0 V, IF=40 A, Tvj =125°C | |||||
| 1.5 | VGE=0 V, IF=40 A, Tvj =175°C | |||||
| Gate-emitter leakage current | IGES | 100 | nA | VCE=0 V, VGE=20 V | ||
| Zero gate voltage collector current | ICES | 10 | μA | VCE=1200V, VGE=0 V |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Cies | 11270 | pF | VGE=0 V, VCE=25 V, ƒ=100 kHz | ||
| Output capacitance | Coes | 242 | pF | |||
| Reverse transfer capacitance | Cres | 10 | pF | |||
| Turn-on delay time | td(on) | 120 | ns | VGE=15 V, VCC=600 V, RG=10 Ω, IC=40 A | ||
| Rise time | tr | 88 | ns | |||
| Turn-off delay time | td(off) | 246 | ns | |||
| Fall time | tf | 160 | ns | |||
| Turn-on energy | Eon | 3.14 | mJ | |||
| Turn-off energy | Eoff | 1.02 | mJ | |||
| Turn-on delay time | td(on) | 112 | ns | VGE=15 V, VCC=600 V, RG=10 Ω, IC=20 A | ||
| Rise time | tr | 51 | ns | |||
| Turn-off delay time | td(off) | 284 | ns | |||
| Fall time | tf | 148 | ns | |||
| Turn-on energy | Eon | 1.32 | mJ | |||
| Turn-off energy | Eoff | 0.53 | mJ |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 214 | nC | VGE=15 V, VCC=960 V, IC=40 A | ||
| Gate-emitter charge | Qge | 103 | nC | |||
| Gate-collector charge | Qgc | 40 | nC |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode reverse recovery time | trr | 293 | ns | VR=600 V, IF=40 A, diF/dt=500 A/μs Tvj = 25°C | ||
| Diode reverse recovery charge | Qrr | 2.7 | μC | |||
| Diode peak reverse recovery current | Irrm | 25 | A |
Note
- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
Version 1: TO247-P package outline dimension
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO247-P | 30 | 11 | 330 | 6 | 1980 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OST40N120HMF | TO247 | yes | yes | yes |
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Green Product Declaration
