Component Type | Range | Parameter Description |
BJT | - | hFE(DC Current Gain),Ube(Base-Emitter Voltage),Ic(Collector Current), Iceo(Collector Cut-off Current(IB=0)), Ices(Collector short Current), Uf(Forward Voltage of protecting diode) |
diode | forward voltage <4.50V | Forward voltage drop, junction capacitance, reverse leakage current Ir |
double diode | forward voltage | |
Zener diode | 0.01-4.50V (Transistor Test Area) | Forward voltage drop, reverse breakdown voltage |
0.01-20V (Zener diode test area) | reverse breakdown voltage | |
MOSFET | JFET | Cg(Gate Capacitance), Id(Drain Current)at Vgs(Gate to Source Threshold Voltag),UfForw Voltage of protecting diode) |
IGBT | Drain current Id under Vgs, protection diode forward voltage drop Uf | |
MOSFET | Turn-on voltage Vt, gate capacitance Cg, drain resistance Rds, protection diode forward voltage drop Uf | |
Thyristor | Gate trigger current <6mA | gate turn-on voltage |
Triac | ||
capacitor | 25pF-100mF | Capacitance Value, Equivalent Series Resistance ESR, Vloss |
Resistor | 0.01-50MΩ | resistance |
Inductor | 0.01mH-20H | Inductance, DC Resistance |
Battery | 0.1-4.5V | Voltage value, battery polarity |
