MD-200RIE
Installation, Training
One Year Warranty
Electrical Etching Machine
Silicon-Based:Si/Sio2/Sinxsic
Corrosion & Hollowed-out
ISO9001: 2000, CE
Reactive Ion Etching
High Precision
New
Minder-Hightech
Wooden Case
1170*750*1080mm
China
Product Description
Reactive ionomer etching machine
| Item | MD150-RIE | MD200-RIE | MD200C-RIE |
| Product size | ≤6 inches | ≤8 inches | ≤8 inches |
| RF power source | 0-300W/500W/1000W Adjustable,automatic matching | ||
| Molecular pump | -/620(L/s)/1300(L/s)/Custom | Antiseptic620(L/s)/1300(L/s)/Custom | |
| Foreline pump | Mechanical pump/dry pump | Dry pump | |
| Process pressure | Uncontrolled pressure/0-1Torr controlled pressure | ||
| Gas type | H/CH4/O2/N2/Ar/SF6/CF4/ CHF3/C4F8/NF3/Custom (Up to 9 channels, no corrosive & toxic gas) | H2/CH4/O2/N2/Ar/F6/CF4/ CHF3/C4F8/NF3/Cl2/BCl3/HBr(Up to 9 channels) | |
| Gas range | 0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/custom | ||
| LoadLock | Yes/No | Yes | |
| Sample tem control | 10°C~Room tem/-30°C~100°C/Custom | -30°C~100°C /Custom | |
| Back helium cooling | Yes/No | Yes | |
| Process cavity lining | Yes/No | Yes | |
| Cavity wall tem control | No/Roomtem~60/120°C | Room tem-60/120°C | |
| Control System | Auto/custom | ||
| Etching material | Silicon-based:Si/SiO2/SiNx··· IV-IV: SiC Magnetic materials/alloy materials Metallic material: Ni/Cr/Al/Au..... Organic material: PR/PMMA/HDMS/Organic film...... | Silicon-based: Si/SiO2/SiNx...... III-V(3): InP/GaAs/GaN...... IV-IV: SiC II-VI (3): CdTe...... Magnetic materials/alloy materials Metallic material: Ni/Cr/A1/Au...... Organic material: PR/PMMA/HDMS /organic film... | |
Process result
Silicon-based material etching
Silicon-based materials, nano-imprint patterns, array
patterns and lens pattern etching
InP normal temperature etching
Pattern etching of InP based devices used in optical communication, including waveguide structure, resonant cavity structure ridge structure etc
SiC material etching
Suitable for microwave devices, power devices, etc
Physical sputtering, etching Organic materiale tching
| It is applied to the etching of difficult to etch materials such as some metals (such as Ni / Cr) and ceramics, and the patternede tching of materials is realized by physical bombardment. | It is used for etching and removal of organic compounds such as photoresist (PR)/ PMMA / HDMS / polymer |
Cermet film material (Au/Ni/Cr/Al2O3)
