Silicon Carbide Epi Wafer
Less Than 0.5%
Less Than 1.5%
N-Doped (N-Type) or Al-Doped (P-Type) Epitaxial Wa
30~200um
Sbd-Level, Mosfet Level
6Inch
China
2804611900
Product Description
We are constantly pursuing higher crystal quality and processing quality to better meet customer needs. We can currently supply 6-inch and 8-inch conductive products in batches.
Power electronic devices are made by growing a silicon carbide epitaxial layer on a conductive silicon carbide substrate to produce a silicon carbide homoepitaxial wafer, which can be further made into power devices such as Schottky diodes, MOSFET, IGBT, etc., which are used in new energy vehicles, rail transportation, and high-power transmission and substation.
Power electronic devices are made by growing a silicon carbide epitaxial layer on a conductive silicon carbide substrate to produce a silicon carbide homoepitaxial wafer, which can be further made into power devices such as Schottky diodes, MOSFET, IGBT, etc., which are used in new energy vehicles, rail transportation, and high-power transmission and substation.
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: Yes, we can customize the specifications according to your needs.
Q5: How to guarantee the quality of your products?
A: Strict detection during production.Strict sampling inspection on products before shipment and intact product packaging ensured.
