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Porous Graphite for Silicon Carbide Ingot Growing图1Porous Graphite for Silicon Carbide Ingot Growing图2Porous Graphite for Silicon Carbide Ingot Growing图3Porous Graphite for Silicon Carbide Ingot Growing图4Porous Graphite for Silicon Carbide Ingot Growing图5Porous Graphite for Silicon Carbide Ingot Growing图6

Porous Graphite for Silicon Carbide Ingot Growing

Price $10.00
Min Order 1 Piece  
Shipping from Zhejiang, China
Quantity
-+
Product details
P401
Silicon Carbide Industry
High-Carbon
Porous Graphite
Artificial Graphite
Artificial Graphite
HP
Porous Graphite
5ppm
SIAMC
Wooden Case
D190*350mm, D250*350mm
China
681519
Product Description
Our porous graphite is a high-quality material with a density of 1.15 g/cm³ and a porosity of 47%, making it an excellent choice for applications that require high permeability. With an average pore size of 40 microns, it is ideal for filtration, gas diffusion, and catalysis. Additionally, our porous graphite has a compressive strength of 16 MPa, ensuring its durability and reliability. Its unique combination of properties, including high thermal conductivity and chemical stability, makes it an ideal material for various applications in the chemical, petrochemical, and semiconductor industries.

Specific Applications:
  •  Photovoltaic industry   
  •  Semiconductor application      
  •  EDM
  •  3D glass mold   
  • Optical fiber application   
  •  High temperature furance application
  •  Metallurgy application     
  • Chemical heat exchanger
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SIAMC Advanced Materials Co., Ltd.

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