Model NO.:

FGH40N60SMD

Shape:

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Naturally Cooled Tube

Function:

IGBT Transistor

Working Frequency:

High Frequency

Structure:

Alloy

Encapsulation Structure:

Ceramic Packaged Transistor

Power Level:

High Power

Material:

Silicon

Installation Style:

SMD / SMT

Product Category:

IGBT Transistors

Operating Temperature:

Standard

Collector- Emitter Voltage Vceo Max:

600 V

Additional Feature:

Low Conduction Loss

Series:

Fgh40n60SMD

Packaging:

Tube

Base Product Number:

Fgh40n60

Subcategory:

IGBT

Trademark:

Specification:

standard

Origin:

China

Product Description

Product Paramenters

Features
• Maximum Junction Temperature : TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A
• High Input Impedance

Low frequency power amplifier complementary pair with 2SB649/A

Company Profile

Product packaging

FAQ

Price	$4.00
Min Order	10 Pieces
Shipping from	Guangdong, China
Quantity	-+

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

Features
• Maximum Junction Temperature : TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A
• High Input Impedance

Shenzhen Jin Da Peng Technology Co., Ltd.

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

Features• Maximum Junction Temperature : TJ = 175°C• Positive Temperature Co−efficient for Easy Parallel Operating• High Current Capability• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A• High Input Impedance

Shenzhen Jin Da Peng Technology Co., Ltd.

Features
• Maximum Junction Temperature : TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A
• High Input Impedance