To247 OST20N135HRF
RoHS, ISO
ST
Remote Cut-Off Shielding Tube
Naturally Cooled Tube
Switch Transistor
High Frequency
Diffusion
Plastic Sealed Transistor
Medium Power
Silicon
Induction Heating
Soft Switching Applications
Orientalsemi
Carton
TO247
China
8541290000
Product Description
General Description
OST20N135HRF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance.This device is suitable for resonant induction heating applications.
Absolute Maximum Ratings at Tj =25ºC unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Collector emitter voltage | VCES | 1350 | V |
| Gate emitter voltage | VGES | ±20 | V |
| Transient Gate emitter voltage, TP ≤10µs, D<0.01 | ±30 | V | |
| Continuous collector current1), TC =25 ºC | IC | 40 | A |
| Continuous collector current1), TC =100 ºC | 20 | ||
| Pulsed collector current2), TC =25 ºC | IC, pulse | 60 | A |
| Diode forward current1), TC =25 ºC | IF | 40 | A |
| Diode forward current1), TC =100 ºC | 20 | ||
| Diode pulsed current2), TC =25 ºC | IF, pulse | 60 | A |
| Power dissipation3), TC =25 ºC | PD | 290 | W |
| Power dissipation3), TC =100 ºC | 145 | W | |
| Operation and storage temperature | Tstg ,Tj | -55 to 150 | ºC |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| IGBT thermal resistance, junction-case | RθJC | 0.43 | .C/W |
| Diode thermal resistance, junction-case | RθJC | 0.43 | .C/W |
| Thermal resistance, junction-ambient4) | RθJA | 40 | .C/W |
Electrical Characteristics at Tj =25 ºC unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Collector-emitter breakdown voltage | V(BR)CES | 1350 | V | VGE=0 V, IC =0.5 mA | ||
Collector-emitter saturation voltage | VCE(sat) | 1.6 | 1.8 | V | VGE =15 V, IC =20 A | |
| 1.8 | 2.2 | V | VGE =15 V, IC =25 A | |||
| 1.9 | V | VGE =15 V, IC =20 A, Tj =150 ºC | ||||
| Gate-emitter threshold voltage | VGE(th) | 5.1 | 5.8 | 6.4 | V | VCE =VGE, ID =0.5 mA |
Diode forward voltage | VF | 1.5 | 1.7 | V | VGE =0 V, IF =20 A | |
| 1.9 | VGE =0 V, IF =20 A, Tj =150 ºC | |||||
| Gate-emitter leakage current | IGES | 100 | nA | VCE =0 V, VGE =20 V | ||
| Zero gate voltage collector current | ICES | 10 | μA | VCE =1350 V, VGE =0 V |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Cies | 3907 | pF | VCE =25 V, VGE =0 V, ƒ=100 KHz | ||
| Output capacitance | Coes | 51.3 | pF | |||
| Reverse transfer capacitance | Cres | 2.6 | pF | |||
| Turn-on delay time | td(on) | 48 | ns | VCC=600 V, IC =20 A, VGE =15 V, RG =10 Ω | ||
| Turn-off delay time | td(off) | 144 | ns | |||
| Fall time | tf | 235 | ns | |||
| Turn-off energy | Eoff | 1.0 | mJ |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 71.5 | nC | IC =20 A, VCC =1080 V, VGE=15 V | ||
| Gate-emitter charge | Qge | 15.4 | nC | |||
| Gate-collector charge | Qgc | 32.8 | nC |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating, pulse width limited by maximum junction temperature.
3) Pd is based on maximum junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta =25 °C.
Ordering Information
| Package | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Box/Carton Box | Units/Carton Box |
| TO247 | 30 | 11 | 330 | 6 | 1980 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OST20N135HRF | TO247 | yes | yes | yes |
Green Product Declaration
