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Aluminum Nitride Aln Amb Substrate with Copper图1Aluminum Nitride Aln Amb Substrate with Copper图2Aluminum Nitride Aln Amb Substrate with Copper图3Aluminum Nitride Aln Amb Substrate with Copper图4Aluminum Nitride Aln Amb Substrate with Copper图5Aluminum Nitride Aln Amb Substrate with Copper图6

Aluminum Nitride Aln Amb Substrate with Copper

Price $20.00
Min Order 1 pieces  
Shipping from Fujian, China
Quantity
-+
Product details
AA INC-AMB20310
Aerospace, Electronics, Medical, Vacuum Brazing
2300MPa
8-30μm
Mo/Mn
Nickel/Copper/Gold
25W/(M.K)
2-9μm
1600ºC
3.7g/cm3
Alumina, Al2O3
High Insulation, High Strength
Insulating Ceramics
INNOVACERA
Standard Cartons with Foam
Customized
Fujian, China
Product Description
 
Aluminum Nitride AMB Ceramic Substrate is a method to realize the bonding of ceramic and metal by reacting a small amount of active elements Ti and Zr in filler metal with ceramics to form a reaction layer which can be wetted by liquid filler metal.
 
Advantage:
* The combination is achieved by chemical reaction between ceramic and active metal solder paste at high temperature, so its bonding strength is higher and reliability is better;
* Could have different thickness of copper on one plate;
* Environmental frindly;
* Strong cold and heat resistance;
* Easy full automation, production efficiency high, low production cost;
* Copper thickness 0.1-0.5mm,very suitable for high power device packaging.
 
Specification
>Metallization thickness: 25 ±10um >Nickel thickness:2~10um; >Pin full strength: 4200kgf/cm2 avg. (at Φ3.0mm pin)
 
Material
Item
Value
 
 
 
 
 
 
Si3N4
Composition
96%SiN
 
Thickness (mm)
0.2,0.32,0.35,0.635,0.4-1.5
 
Density(g/cm3)
3.2±0.25
 
Thermal Conductivity (20°C, W/m·k)
85+
 
Flexural Strength (MPA)
700-800
 
Dielectric Constant (IMHz)
8
 
Dielectric loss (IMHz)
0.001
 
Dielectric Strength (KV/mm)
20
 
Volume Resistivity (Ω/CM)
1*1014
 
 
 
 
 
 
ALN
Composition
96%ALN
 
Thickness (mm)
0.25,0.32,0.635
 
Density(g/cm3)
3.3
 
Thermal Conductivity (20°C, W/m·k)
170+
 
Flexural Strength (MPA)
350
 
Dielectric Constant (IMHz)
9
 
Dielectric loss (IMHz)
0.0005
 
Dielectric Strength (KV/mm)
20
 
Volume Resistivity (Ω/CM)
1014
 
 
 
Copper
Material
Oxygen-free copper
 
Purity (%)
99.99
 
Hardness( HV)
60-110
 
Conductivity (MS/m)
58.6
 
Thickness (mm)
1.2,1.0,0.8,0.5,0.4,0.3,0.25,0.2
 
 
 
 
 
AMB Substrate
Largest size (mm)
190*140
 
Line Spacing (mm)
≥0.5
 
Line Width (mm)
customized
 
Peel strength of copper layer (minimum) (N/mm)
10
 
Solderability(%)
95%
 
Delivery method
Small pieces or panel
 
Surface states (um)
CU/AU/AG
 
VR
 
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Xiamen Innovacera Advanced Materials Co., Ltd.

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