DGC60F65M
Welding, UPS
2023
Discrete Device
Silicon
Dgc60f65m
to-247
N-Type Semiconductor
650V
60A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 650 | V | ||
| Gate- Emitter Voltage | VGES | ±30 | V | ||
| Collector Current | IC(T=25ºC) | 120 | A | ||
| Collector Current | (Tc=100ºC) | 60 | A | ||
| Pulsed Collector Current | ICM | 180 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 60 | A | ||
| Diode Pulsed Current | IFpuls | 450 | A | ||
| Total Dissipation | TC=25ºC | PD | 428 | W | |
| TC=100ºC | PD | 214 | W | ||
| Junction Temperature | Tj | -45~175 | ºC | ||
| storage Temperature | Tstg | -45~175 | ºC | ||
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat), typ = 1.9V @ IC =60A and Tj = 25 ° |
| Extremely enhanced avalanche capabilityExtremely |
| Applications |
| Welding |
| Three-level inverter |
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DGC60F65M | TO-247 | DGC60F65M | Pb-free | Tube | 300/box |
