DGF30F65M2
Welding, UPS
2023
Discrete Device
Silicon
Dgf30f65m2
to-247
N-Type Semiconductor
650V
30A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 650 | V | ||
| Gate- Emitter Voltage | VGES | ±30 | V | ||
| Collector Current | IC(TJ=25ºC) | 60 | A | ||
| Collector Current | (TJ=100ºC) | 30 | A | ||
| Pulsed Collector Current | ICM | 180 | A | ||
| Diode Continuous Forward Current | IF @TJ = 100 °C | 30 | A | ||
| Diode Pulsed Current | IFM | 180 | A | ||
| Total Dissipation | TC=25ºC | Ptot | 60 | W | |
| TC=100ºC | Ptot | 30 | W | ||
| Junction Temperature | Tj | -45~175 | ºC | ||
| storage Temperature | Tstg | -45~150 | ºC | ||
| Features |
FS Trench Technology, Positive temperature coefficient |
Low saturation voltage: VCE(sat), typ = 1.85V @ IC =60A and Tj = 25°C |
Extremely enhanced avalanche capability |
| Applications |
| Welding |
| Three-level inverter |
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DGF30F65M2 | TO-220F | DGF30F65M2 | Pb-free | Tube | 1000/box |
