DGC40C120M2T
Welding, UPS, Three-Leve Inverter
2022
Discrete Device
Metal-Oxide Semiconductor
Dgc40c120m2t
Module
N-Type Semiconductor
1200V
40A
Wxdh
WXDH
Econopack2
Wuxi, China
8541290000
Product Description
40A 1200V PIM in one-package
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.
| Features |
| Low gate charge |
| Excellent switching speed |
| Easy paralleling capability due to positive temperature Coefficient in VCEsat |
| Tsc≥10μs |
| Fast recovery full current anti-parallel diode |
| Low VCEsat |
| Applications |
| Welding |
| UPS |
| Three-leve Inverter |
| AC to DC Converters |
| AC and DC servo drive amplifier |
| Type | VCE | IC | VCEsat,Tj=25ºC | Tjop | Package |
| DGC40C120M2T | 1200V | 40A (Tj=100ºC) | 1.7V (Typ) | 150ºC | EconOPACK2 |
Electrical Characteristics
5.1 Absolute Maximum Ratings (IGBT-inverter/IGBT-brake) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Collector-to-Emitter Voltage | VCE | 1200 | V | |||
| Gate-to-Emitter Voltage | VGE | ±30 | V | |||
| DC Collector current | Ic Tj=25ºC | 80 | A | |||
| Tj=100ºC | 40 | A | ||||
| Pulsed Collector Current #1 | ICM | 160 | A | |||
5.2 Absolute Maximum Ratings (Diode-inverter) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Peak Repetitive Reverse Voltage | VRRM | 1200 | V | |||
| DC Blocking Voltage | VR | 1200 | V | |||
| Average Rectified Forward Current | IF(AV) | 40 | A | |||
| Repetitive Peak Surge Current | IFRM | 60 | A | |||
| Nonrepetitive Peak Surge Current(single) /tp=1.0ms | IFSM | 400 | A | |||
5.3 Absolute Maximum Ratings (Diode-rectifier) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Peak Repetitive Reverse Voltage | VRRM | 1600 | V | |||
| Reverse does not repeat peak voltage / IRRM=5μA | VRSM | 2000 | V | |||
| Average Rectified Forward Current | IF(AV) | 25 | A | |||
| Nonrepetitive Peak Surge Current(single) / tp=10ms | IFSM | 320 | A | |||
| I2t-value / tp=10ms, sin 180° | I2t | 512 | A2s | |||
5.4 Absolute Maximum Ratings (Diode-brake) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Peak Repetitive Reverse Voltage | VRRM | 1200 | V | |||
| DC Blocking Voltage | VR | 1200 | V | |||
| Average Rectified Forward Current | IF(AV) | 20 | A | |||
| Repetitive Peak Surge Current | IFRM | 30 | A | |||
| Nonrepetitive Peak Surge Current(single) /tp=1.0ms | IFSM | 300 | A | |||
5.5 IGBT Module
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Junction Temperature Range(inverter/brake) | Tjmax | -45~175 | ºC | |||
| Junction Temperature Range(Diode-rectifier) | Tjmax | -45~150 | ºC | |||
| Operating Junction Temperature | Tjop | -45~150 | ºC | |||
| Storage Temperature Range | Tstg | -45~150 | ºC | |||
| Isolation Voltage RMS,f=50Hz,t=1min | VISO | 2500 | A | |||
