DHC1M040120W
1200V
60A
Discrete Device
N-type Semiconductor
Sic
to-247
Power Supplies
Dhc1m040120W
2022
Wxdh
WXDH
Tube
Wuxi, China
8541100000
Product Description
60A 1200V N-channel SIC Power MOSFET1 Description
This product family offers state of the art performance. It is
designed for high frequency applications where high
efficiency and high reliability are required. It is qualified
and manufactured on the productive 6 inch SiC line in
China fully owned by DongHai Semiconducor.
| Features |
| Higher System Efficiency |
| Reduced Cooling Requirements |
| Increased Power Density |
| Increased System Switching Frequency |
| Applications |
| Power Supplies |
| High Voltage DC/DC Converters |
| Motor Drives |
| Switch Mode Power Supplies |
| Pulsed Power applications |
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Drian-to-Source Voltage | VDSS | 1200 | V | |||
| Gate-to-Source Voltage max | VGSS | -10/+25 | V | |||
| Gate-to-Source Voltage max | VGSS | -5/+20 | V | |||
| Continuous Drain Current | ID TC=25ºC | 60 | A | |||
| TC=100ºC | 40 | A | ||||
| Pulsed Drain Current | IDM | 160 | A | |||
| Power Dissipation | Tj=150ºC | Ptot | 330 | W | ||
| TC=25ºC | Ptot | W | ||||
| Junction Temperature Range | Tj | -55~150 | ºC | |||
| Storage Temperature Range | Tstg | -55~150 | ºC | |||
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| DHC1M040120W | TO-247 | DHC1M040120W | Pb-free | Tube | 300/box |
